Ammonothermal Bulk GaN Substrates for Power Electronics
| Autor: | Mark P. D'Evelyn, Derrick S. Kamber, Hak Do Yoo, Wenkan Jiang, Dirk Ehrentraut, Rajeev T. Pakalapati, Bradley C. Downey |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | ECS Transactions. 58:287-294 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost, known as SCoRA (Scalable Compact Rapid Ammonothermal). SCoRA GaN growth has been performed on seed crystals with diameters between 5 mm and 2" to thicknesses of 0.5-4 mm. The highest growth rates are greater than 40 um/h and rates in the 10-30 mm/h range are routinely observed. Two-inch diameter, crack-free, free-standing, n-type bulk GaN crystals have been grown. The crystals have been characterized by a range of techniques, including x-ray diffraction rocking-curve (XRC) analysis, optical microscopy, cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is very good, with FWHM values of 15-80 arc-sec and average dislocation densities below 5x105 cm-2. |
| Databáze: | OpenAIRE |
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