Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform
| Autor: | Susanna Reggiani, Michele Visciarelli, Antonio Gnudi, Giorgio Baccarani, Elena Gnani |
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| Přispěvatelé: | Visciarelli, Michele, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio |
| Rok vydání: | 2017 |
| Předmět: |
III-V material
02 engineering and technology 01 natural sciences Condensed Matter::Materials Science strain Ballistic conduction 0103 physical sciences Ideal (ring theory) Electrical and Electronic Engineering quantum transport 010302 applied physics Physics Condensed matter physics Strain (chemistry) business.industry Electronic Optical and Magnetic Material Electrical engineering Order (ring theory) Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Electrostatics Electronic Optical and Magnetic Materials tunnel FETs (TFET) Logic gate interface traps (ITs) 0210 nano-technology Degeneracy (mathematics) business |
| Zdroj: | IEEE Transactions on Electron Devices. 64:3108-3113 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | A simulation study on the impact of interface traps and strain on the ${I}$ – ${V}$ characteristics of co-optimized p- and n-type tunnel FETs (TFETs) realized on the same InAs/Al0.05Ga0.95Sb technology platform is carried out, using a full-quantum ballistic simulator. In order to capture the effect of interface/border traps on the device electrostatics consistently with carrier degeneracy and ballistic transport, the classical Shockley-Read–Hall theory has been properly generalized. The effect of an experimental ${D}_{\mathrm {it}}$ distribution of a high- ${k}$ gate stacks on InAs has been investigated. Unfortunately, traps induce a significant reduction of the ON-state current. However, it turns out that localized strain at the source/channel heterojunction caused by lattice mismatch is able to induce for the n-type TFET, a performance enhancement with respect to the ideal device even in the presence of traps. On the contrary, for the p-type one, a current degradation $\simeq 18$ % is observed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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