A high-resolution X-ray photoemission study of the total valence-band densities of states of GaSe and BiI3

Autor: F. R. McFeely, Lothar Ley, D. A. Shirley, S. P. Kowalczyk
Rok vydání: 1975
Předmět:
Zdroj: Kowalczyk, S.P.; Ley, L.; McFeely, F.R.; & Shirley, D.A.(1975). A HIGH-RESOLUTION X-RAY PHOTOEMISSION STUDY OF THE TOTAL VALENCE-BAND DENSITIES OF STATES OF GaSe AND BiI3. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/9rs425qk
ISSN: 0038-1098
DOI: 10.1016/0038-1098(75)90478-0
Popis: The total valence band denstiy of states spectra for the semiconducting layered compounds GaSe and BiI3 were obtained by X-ray photoemission spectroscopy. The results for GaSe were used to test recent band structure calculations and are compared with earlier photoemission results. The BiI3 data are the first experimental determination of the total valence band density of states for this compound. Since no calculations exist for BiI3, tentative assignments were made.
Databáze: OpenAIRE