Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

Autor: Tsung Chi Hsu, Hon Way Lin, C. Y. Chen, Hsien Yao Tseng, Yun Ting Lu, Chien-Chung Lin, Po-Tsung Lee, Hao-Chung Kuo, Ching Hsueh Chiu, Chao-Hsin Wu, Chieh Yu Kang, Yen Wei Yeh, Yu Tzu Chen, Yang Sheng, Chih Chiang Shen
Rok vydání: 2019
Předmět:
Zdroj: Nanoscale Research Letters
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
ISSN: 1931-7573
Popis: We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.
Databáze: OpenAIRE