Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers
| Autor: | B. G. M. Tavares, M. A. Tito, Yu. A. Pusep |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Condensed matter physics Condensed Matter::Other General Physics and Astronomy 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field Gallium arsenide chemistry.chemical_compound SEMICONDUTORES chemistry 0103 physical sciences Energy structure 010306 general physics 0210 nano-technology Gaas algaas Conduction band Electron density of states Recombination |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
| Popis: | The processes of recombination of the photoexcited electron-hole pairs were studied in GaAs/AlGaAs weakly coupled multiple quantum wells, where the photoluminescence emission was composed of the contributions from the Γ−Γ and Γ−X conduction band minibands. Remarkable enhancement of the recombination time was observed when the magnetic field caused depopulation of the higher energy Γ−X miniband. The observed effect is attributed to the magnetic field induced variation of the electron density of states. |
| Databáze: | OpenAIRE |
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