A G-band high power frequency doubler in transferred-substrate InP HBT technology
| Autor: | Wolfgang Heinrich, Viktor Krozer, Nils Weimann, Ksenia Nosaeva, Maruf Hossain, B. Janke |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Frequency multiplier Transistor Electrical engineering Impedance matching 020206 networking & telecommunications 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics law.invention Power (physics) chemistry.chemical_compound chemistry G band law 0202 electrical engineering electronic engineering information engineering Indium phosphide Electrical and Electronic Engineering Wideband 0210 nano-technology business Elektrotechnik |
| Popis: | This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers $5\ {\rm dBm} \pm 3$ dBm in the range 140–220 GHz. The dc consumption is only 41 mW. To the knowledge of the authors, this is the highest output power for a wideband transistor based frequency doubler in the 140–220 GHz frequency range published so far. The results show the ability to implement a high output power G-band source in transferred-substrate InP HBT technology. |
| Databáze: | OpenAIRE |
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