Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
| Autor: | Dilber Esra Yildiz, Mehmet Parlak, Ö. Bayraklı Sürücü, Hasan Hüseyin Güllü, M. Terlemezoglu |
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| Přispěvatelé: | [Belirlenecek], Hitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü, Kırşehir Ahi Evran Üniversitesi, Fen-Edebiyat Fakültesi, Fizik Bölümü |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Admittance Equivalent series resistance Condensed matter physics [Belirlenecek] Dielectric Condensed Matter Physics 01 natural sciences Capacitance Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Electrical resistivity and conductivity 0103 physical sciences Dissipation factor Dielectric loss Electrical and Electronic Engineering Diode |
| Popis: | In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high–low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage. © 2019, Springer Science+Business Media, LLC, part of Springer Nature. 2-s2.0-85064555655 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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