Analysis of the diffraction pattern for optimal assist feature placement
| Autor: | Emek Yesilada, G. Kerrien, Catherine Martinelli, Florent Vautrin, Laurent Le Cam, Christophe Couderc, Jerome Belledent, Frank Sundermann, Patrick Schiavone, Franck Foussadier, Yorick Trouiller, Jonathan Planchot, Jean-Christophe Urbani, Patrick Montgomery, Mazen Saied, Frederic Robert, Amandine Borjon, Bill Willkinson, Yves Rody, Christian Gardin |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Philips France Semiconducteurs, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Freescale Semiconductor (FREESCALE SEMICONDUCTOR), Freescale semiconductor, STMicroelectronics [Crolles] (ST-CROLLES), Freescale Semiconductor Inc., NXP Semiconductors, Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2007 |
| Předmět: |
Diffraction
Depth of focus Computer science SVM Process window 02 engineering and technology 01 natural sciences 010309 optics Optics Optical proximity correction Position (vector) 0103 physical sciences Reticle [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical and Electronic Engineering business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials ORC Failure prediction Feature (computer vision) 0210 nano-technology business OPC Exposure latitude Algorithm |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩ Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩ |
| ISSN: | 0167-9317 1873-5568 |
| DOI: | 10.1016/j.mee.2007.01.016 |
| Popis: | International audience; Assist features (AF) are an essential component of reticle enhancement techniques. Their use is indispensable in sub-100 nm technologies to ensure a maximum process window (PW) across chip, especially for critical levels. Indeed, AF, which can be binary, attenuated or phase-shifted, help in providing a larger PW to the features they assist when they are used in conjunction with off-axis illumination. The depth of focus (DOF) of an isolated structure is improved by the presence of AF by providing to the optical system a diffraction pattern close to the diffraction pattern of a dense structure. The resulting DOF and exposure latitude (EL) are dependent on the relative position of the AF from the main feature. Moreover, the PW varies while inserting one, two or more AF. The relative position of each influences the results. In this paper, a method will be detailed to optimise the placement of the AF. For the purpose of this study, the diffraction pattern induced by the insertion of one or several AF is analysed in frequency space. This analysis details the evolution of the intensity of even and odd orders during the insertion of AF. The calculation of the optimum placement is detailed, and the DOF resulting from the insertion of one or more AF is also presented. |
| Databáze: | OpenAIRE |
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