Anisotropic Raman Scattering and Mobility in Monolayer 1Td-ReS2 Controlled by Strain Engineering
| Autor: | Xl L. Wu, Chengyu He, Chong Chen, B.C. Wei, L. Z. Liu, Y.M. Min, Zhi-Hua Zhou |
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| Rok vydání: | 2016 |
| Předmět: |
Analytical chemistry
General Physics and Astronomy FOS: Physical sciences 02 engineering and technology Electronic structure 01 natural sciences symbols.namesake Strain engineering 0103 physical sciences Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics Anisotropy Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Chemistry business.industry Materials Science (cond-mat.mtrl-sci) Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Semiconductor symbols Density functional theory 0210 nano-technology business Raman spectroscopy Raman scattering |
| DOI: | 10.48550/arxiv.1611.04882 |
| Popis: | Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and mobility cut-on rate of monolayer unique distorted-1T(1Td) ReS2 with external strain are determined theoretically based on the density function theory. The angle-dependent Raman spectrum of Ag-like, Eg-like and Cp models are used to discriminate and analysis structural anisotropy; the strain is exploited to adjust the structural symmetry and electronic structure of ReS2 so as to enhance mobility cut-on rate to almost 6 times of the original value. Our results suggest the use of the strain engineering in high-quality semiconductor switch device. Comment: 16 pages with 3 figs |
| Databáze: | OpenAIRE |
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