Schottky barrier contact-based RF MEMS switch

Autor:	Brandon W. Pillans, Premjeet Chahal, Jeong-Bong Lee, Francis J. Morris, G. Frazier
Rok vydání:	2007
Předmět:	Microelectromechanical systems Materials science Fabrication business.industry Mechanical Engineering Capacitive sensing Schottky barrier Electrical engineering Biasing Hardware_GENERAL Optoelectronics Radio frequency Electronics Electrical and Electronic Engineering business Microwave
Zdroj:	2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS).
DOI:	10.1109/memsys.2007.4433043
Popis:	This paper presents the design, fabrication and measurement results for a novel Schottky barrier contact-based RF MEMS switch. This Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased, but can also conduct current in a forward biased state. Forward biasing the switch recombines trapped charges, thus extending the lifetime of the switch. This work intimately combines MEMS processing with solid-state electronics to produce a truly unique RF device. To the author's knowledge, nothing similar to this work has ever been reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5df573215160df3677acb01441a5cf4e https://doi.org/10.1109/memsys.2007.4433043 Zobrazit plný text záznamu