Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation
| Autor: | Gvozden Ilić, Milić M. Pejović, Milojko Kovačević, Zoran Rajović, Olivera Ciraj-Bjelac |
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| Rok vydání: | 2013 |
| Předmět: |
Range (particle radiation)
Materials science Article Subject 010308 nuclear & particles physics Renewable Energy Sustainability and the Environment business.industry lcsh:TJ807-830 lcsh:Renewable energy sources Gamma ray irradiation General Chemistry 01 natural sciences Atomic and Molecular Physics and Optics 030218 nuclear medicine & medical imaging Threshold voltage 03 medical and health sciences 0302 clinical medicine P channel Absorbed dose 0103 physical sciences MOSFET Optoelectronics General Materials Science Irradiation business Sensitivity (electronics) |
| Zdroj: | International Journal of Photoenergy, Vol 2013 (2013) International Journal of Photoenergy |
| ISSN: | 1687-529X 1110-662X |
| DOI: | 10.1155/2013/158403 |
| Popis: | Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of Co-60 in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper. Link to erratum: [https://vinar.vin.bg.ac.rs/handle/123456789/9743] |
| Databáze: | OpenAIRE |
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