Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
| Autor: | Klaus Biermann, Thomas Elsaesser, H. Kuenzel, D. Nickel |
|---|---|
| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
Diffraction
superlattice peaks iii-v semiconductors single crystalline growth 300 k molecular beam epitaxial growth three-level approach electron traps low-temperature mbe growth Materials Chemistry transmission aluminium compounds Condensed Matter Physics semiconductor growth beryllium doping pump-probe techniques multiple quantum wells x-ray diffraction Optoelectronics photoluminescence Beryllium 100 c trap 1.55 mum Molecular beam epitaxy semiconductor superlattices bi-exponential decay Photoluminescence Superlattice quantum well recombination paths chemistry.chemical_element photoluminescence emission interface structure Inorganic Chemistry Optics molecular beam epitaxy Thin film Quantum well semiconductor quantum wells unstrained material business.industry modified growth conditions Doping light transmission beryllium optical excitation gallium arsenide indium compounds chemistry Inp-based AlInAs/GaInAs MQW structures business x-ray diffraction spectra |
| Popis: | Basic development steps towards low-temperature molecular beam epitaxy of InP-based AlInAs/GaInAs multiple quantum wells are presented. The achievement of unstrained material and the adjustment of 1.55 μm emission necessitate modified growth conditions as compared to conventional growth. Single crystalline growth down to a temperature as low as 100°C was successfully achieved as indicated by the appearance of superlattice peaks in the X-ray diffraction spectra as well as 300 K photoluminescence emission. The temporal development of transmission changes after optical excitation (pump-probe techniques) in the low-temperature material is predominantly governed by two recombination paths. Modelling of this bi-exponential decay on the basis of a three-level approach delivers the characteristics of the main trap incorporated in the quantum well material when grown at low temperature. The physical nature of this trap is attributed to As Ga as supported by results of beryllium doping. |
| Databáze: | OpenAIRE |
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