Compensation engineering for uniform n-type silicon ingots
| Autor: | Antoine Thomas, Bastien Dehestru, Mustapha Lemiti, Roland Einhaus, Erwann Fourmond, Maxime Forster, Andres Cuevas |
|---|---|
| Přispěvatelé: | INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, Australian National University (ANU), Australian National University - Department of engineering (ANU) |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element 02 engineering and technology 7. Clean energy 01 natural sciences Compensation (engineering) Monocrystalline silicon 0103 physical sciences [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Ingot Diffusion (business) Gallium Boron 010302 applied physics Renewable Energy Sustainability and the Environment business.industry Doping 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business |
| Zdroj: | Solar Energy Materials and Solar Cells Solar Energy Materials and Solar Cells, Elsevier, 2013, 111, pp.146-152. ⟨10.1016/j.solmat.2013.01.001⟩ |
| ISSN: | 0927-0248 |
| Popis: | International audience; This paper addresses a major issue related to the use of upgraded-metallurgical grade silicon for n-type solar cells. We show that n-type silicon ingots, grown from silicon feedstock containing both boron and phosphorus, display a vertical net doping variation which is incompatible with high-yield production of high-efficiency solar cells. As a solution, we propose to use compensation engineering, by means of gallium co-doping, and demonstrate its potential to control the net doping along the ingot height. The resulting material exhibits high minority carrier diffusion length gratefully to compensation but degrades upon illumination due to the activation of the boron-oxygen defect. This latter degradation remains an important though not unsurmountable challenge for making high-efficiency n-type solar cells with upgraded-metallurgical grade silicon. |
| Databáze: | OpenAIRE |
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