Indirect excitons in hydrogen-doped ZnO
| Autor: | Liangchen Zhu, Sajid Ali, Matthew R. Phillips, Michael J. Ford, L. L. C. Lem, Thien-Phap Nguyen, Cuong Ton-That, Kit Fair |
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| Přispěvatelé: | University of Technology Sydney (UTS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN) |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Exciton 02 engineering and technology 01 natural sciences Molecular physics Condensed Matter::Materials Science Metastability 0103 physical sciences Spontaneous emission 010306 general physics ComputingMilieux_MISCELLANEOUS Applied Physics Condensed Matter::Other Doping Schottky diode Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Crystallographic defect Surfaces Coatings and Films Electronic Optical and Magnetic Materials Excited state [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Density functional theory 0210 nano-technology |
| Zdroj: | Journal of Physics D: Applied Physics Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (11), ⟨10.1088/1361-6463/aa5c23⟩ |
| ISSN: | 0022-3727 1361-6463 |
| DOI: | 10.1088/1361-6463/aa5c23⟩ |
| Popis: | © 2017 IOP Publishing Ltd. We present a correlative experimental and theoretical study of bound excitons in hydrogen-doped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface region, using a combination of surface-sensitive characterisation techniques and density functional theory calculations. A metastable sub-surface emission at 3.31 eV found in H-doped ZnO is attributed to the radiative recombination of indirect excitons localised at basal plane stacking faults (BSFs) where the excitonic transition involves electrons bound to bond-centre hydrogen donors in the potential well of the BSF. Additionally, our work shows the electrical transport of ZnO Schottky junctions is dominated by electrons confined at BSFs in the near-surface region. |
| Databáze: | OpenAIRE |
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