Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching
| Autor: | Srinivasan Anand, Anders Gustafsson, Naeem Shahid, Shagufta Naureen, Saulius Marcinkevicius, Vytautas Liuolia |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Nanoteknik
Nanostructure Materials science Photoluminescence Luminescence Physics and Astronomy (miscellaneous) Superlattices Wave-Guides Cathodoluminescence Nanotechnology 02 engineering and technology 01 natural sciences Passivation Lattice (order) 0103 physical sciences Fysik Indium-Phosphide Nanowires Spectroscopy Nanopillar 010302 applied physics business.industry Detector Surface Recombination Velocity Carrier lifetime 021001 nanoscience & nanotechnology Nanolithography Physical Sciences Optoelectronics Nano Technology 0210 nano-technology business |
| Popis: | We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. QC 20130806. Updated from submitted to published. |
| Databáze: | OpenAIRE |
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