Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates
| Autor: | L. William, Mayeul Chipaux, Vincent Jacques, Margarita Lesik, Loïc Toraille, Alix Gicquel, T. Debuisschert, Jocelyn Achard, Ovidiu Brinza, Alexandre Tallaire, Jean-François Roch, T. Plays |
|---|---|
| Přispěvatelé: | Laboratoire Aimé Cotton (LAC), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-École normale supérieure - Cachan (ENS Cachan), Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Paris 13 (UP13)-Institut Galilée-Université Sorbonne Paris Cité (USPC)-Centre National de la Recherche Scientifique (CNRS), Thales Research and Technologies [Orsay] (TRT), THALES, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11) |
| Rok vydání: | 2015 |
| Předmět: |
[PHYS]Physics [physics]
Materials science Magnetometer Mechanical Engineering Occurrence probability Analytical chemistry Nitrogen doping Crystal growth General Chemistry Chemical vapor deposition [SPI.MAT]Engineering Sciences [physics]/Materials Electronic Optical and Magnetic Materials law.invention [SPI]Engineering Sciences [physics] [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph] law Orientation (geometry) Materials Chemistry [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering Electrical and Electronic Engineering Electron paramagnetic resonance ComputingMilieux_MISCELLANEOUS Spin-½ |
| Zdroj: | Diamond and Related Materials Diamond and Related Materials, Elsevier, 2015, 56, pp.47-53. ⟨10.1016/j.diamond.2015.05.003⟩ |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2015.05.003 |
| Popis: | Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15–50 μm/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electron spin resonance measurements were carried out to determine NV centers orientation and concluded that one specific orientation has an occurrence probability of 73% when (100)-grown layers show an equal distribution in the 4 possible directions. A spin coherence time of around 270 μs was measured which is equivalent to that reported for material with similar isotopic purity. Although a higher degree of preferential orientation was achieved with (111)-grown layers (almost 100%), the ease of growth and post-processing of the (113) orientation make it a potentially useful material for magnetometry or other quantum mechanical applications. |
| Databáze: | OpenAIRE |
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