Pion-induced damage in silicon detectors

Autor:	G. Lindström, Eckhart Fretwurst, E. León-Florián, B. Kaiser, Claus Gößling, A. Chilingarov, F. Lemeilleur, S.J. Bates, R. Wunstorf, H. Feick, C. Furetta, M. Glaser, A. Rolf, Michael Moll, G. N. Taylor
Rok vydání:	1996
Předmět:	Physics Nuclear and High Energy Physics Silicon Physics::Instrumentation and Detectors Annealing (metallurgy) Nuclear Theory Detector chemistry.chemical_element Pion chemistry Impurity Neutron Detectors and Experimental Techniques Atomic physics Nuclear Experiment Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 379:116-123
ISSN:	0168-9002
Popis:	The damage induced by pions in silicon detectors is studied for positive and negative pions for fluences up to 1014 cm−2 and 1013 cm−2, respectively. Results on the energy dependence of the damage in the region of 65 to 330 MeV near to the Δ resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron- and proton-induced damage are presented and discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d6f5ef1cde71b140117ef17701d0f42 https://doi.org/10.1016/0168-9002(96)00538-4 Zobrazit plný text záznamu Full Text from ScienceDirect