Characterization of hermetic wafer-level Cu-Sn SLID bonding
| Autor: | G. R. Hayes, H. J. van de Wiel, Adriana Lapadatu, Maaike M. Visser Taklo, A-S. B. Vardoy, H. R. Fischer |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Wafer bonding Annealing (metallurgy) SLID Electronic packaging Intermetallic Electronics engineering Solid liquid inter diffusion law.invention Optical microscope law MIP - Materials for Integrated Products Vacuum sealing Wafer Bond interface Room temperature TS - Technical Sciences Industrial Innovation Copper compounds Metallurgy Mechatronics Mechanics & Materials Electronics Packaging Bonding process Anodic bonding Cu-Sn Crystallite |
| Zdroj: | 2012 4th Electronic System-Integration Technology Conference, ESTC 2012, 17 September 2012 through 20 September 2012, Amsterdam |
| Popis: | A flux-less copper-tin (Cu-Sn) solid-liquid inter-diffusion (SLID) bonding process, providing a cost-effective hermetic vacuum sealing at wafer-level, has been investigated. Observations have been made indicating that the storage time of Cu-Sn plated wafers before bonding is critical with regard to voiding. Growth of the intermediately formed intermetallic compound (IMC), Cu 6 Sn 5 , was investigated as a possible cause. Room temperature aging of Cu-Sn plated wafers prior to bonding was performed as well as annealing of un-bonded Cu-Sn plated wafers. The presence of large Cu 6 Sn 5 and Cu 3 Sn crystallites which nearly depleted the Sn was observed by optical microscopy after annealing. If large Cu 6 Sn 5 grains from opposite contact planes meet at the bond interface, voids are predicted to be formed during the subsequent stages of liquid inter-diffusion and solidification. Implications on the Cu-Sn bonding strategy based on the results are presented. |
| Databáze: | OpenAIRE |
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