Ion microscopy based on laser-cooled cesium atoms

Autor: Pierre Pillet, G. Khalili, Andrea Fioretti, Maria Allegrini, P. Sudraud, M. Reveillard, B. Rasser, Daniel Comparat, I. Guerri, Matthieu Viteau, Yoann Bruneau, L. Kime, Donatella Ciampini, Francesco Fuso
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: Ultramicroscopy (Amst.) 164 (2016): 70–77. doi:10.1016/j.ultramic.2015.12.007
info:cnr-pdr/source/autori:Viteau, M.; Reveillard, M.; Kime, L.; Rasser, B.; Sudraud, P.; Bruneau, Y.; Khalili, G.; Pillet, P.; Comparat, D.; Guerri, I.; Fioretti, A.; Ciampini, D.; Allegrini, M.; Fuso, F./titolo:Ion microscopy based on laser-cooled cesium atoms/doi:10.1016%2Fj.ultramic.2015.12.007/rivista:Ultramicroscopy (Amst.)/anno:2016/pagina_da:70/pagina_a:77/intervallo_pagine:70–77/volume:164
Popis: We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled cesium beam adapted for imaging and modifying different surfaces in the few-tens nanometer range. Efficient atomic ionization is obtained by laser promoting ground-state atoms into a target excited Rydberg state, then field-ionizing them in an electric field gradient. The method allows obtaining ion currents up to 130 pA. Comparison with the standard direct photo-ionization of the atomic beam shows, in our conditions, a 40-times larger ion yield. Preliminary imaging results at ion energies in the 1-5 keV range are obtained with a resolution around 40 nm, in the present version of the prototype. Our ion beam is expected to be extremely monochromatic, with an energy spread of the order of 1 eV, offering great prospects for lithography, imaging and surface analysis.
8 pages, 6 figures
Databáze: OpenAIRE