Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena
| Autor: | Masanori Tsukuda, Kazunori Hasegawa, Ichiro Omura, Seiya Abe, Tamotsu Ninomiya |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Gate
02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Noise (electronics) IGBT Shoot-through Parasitic capacitance 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Hardware_INTEGRATEDCIRCUITS Shielding effect Electrical and Electronic Engineering Safety Risk Reliability and Quality Scaling 010302 applied physics Physics business.industry 020208 electrical & electronic engineering Electrical engineering Biasing Insulated-gate bipolar transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Bias voltage business Shoot through Voltage |
| Zdroj: | Microelectronics Reliability. :482-485 |
| ISSN: | 0026-2714 |
| Popis: | In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scaling principle. For safe switching, the required gate voltage bias is predicted to be −1.2 V or less for the present IGBTs and − 6 V or less is required to completely cancel the gate noise voltage. From the IGBT design, the bias voltage of scaling IGBT requires −2 V to completely cancel the gate noise voltage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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