Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
| Autor: | Dirk Hoffmann, Henning Fouckhardt, Thomas Henning Loeber |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Photoluminescence GaSb quantum dots General Physics and Astronomy Nanotechnology Epitaxy lcsh:Chemical technology lcsh:Technology Spectral line Full Research Paper growth temperature law.invention Stranski–Krastanov growth Stack (abstract data type) law General Materials Science lcsh:TP1-1185 Electrical and Electronic Engineering lcsh:Science semiconductor laser business.industry lcsh:T Laser lcsh:QC1-999 Wavelength Nanoscience V/III flux ratio Quantum dot Optoelectronics lcsh:Q business lcsh:Physics |
| Zdroj: | Beilstein Journal of Nanotechnology Beilstein Journal of Nanotechnology, Vol 2, Iss 1, Pp 333-338 (2011) |
| ISSN: | 2190-4286 |
| Popis: | GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 1010 cm−2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 and 1.035 μm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K. |
| Databáze: | OpenAIRE |
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