In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate
| Autor: | Marija Drndic, Paul Masih Das |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
In situ
Materials science business.industry General Engineering General Physics and Astronomy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Article 0104 chemical sciences chemistry.chemical_compound chemistry Silicon nitride Transmission electron microscopy Monolayer Cathode ray Optoelectronics General Materials Science Field-effect transistor 0210 nano-technology business Molybdenum disulfide Beam (structure) |
| Zdroj: | ACS Nano |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.0c02908 |
| Popis: | We use the beam of a transmission electron microscope (TEM) to modulate in situ the current–voltage characteristics of a two-terminal monolayer molybdenum disulfide (MoS(2)) channel fabricated on a silicon nitride substrate. Suppression of the two-dimensional (2D) MoS(2) channel conductance up to 94% is observed when the beam hits and charges the substrate surface. Gate-tunable transistor characteristics dependent on beam current are observed even when the beam is up to tens of microns away from the channel. In contrast, conductance remains constant when the beam passes through a micron-sized hole in the substrate. There is no MoS(2) structural damage during gating, and the conductance reverts to its original value when the beam is turned off. We observe on/off ratios up to ~60 that are largely independent of beam size and channel length. This TEM field-effect transistor architecture with electron beam gating provides a platform for future in situ electrical measurements. |
| Databáze: | OpenAIRE |
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