Recent Advances in β-Ga2O3–Metal Contacts
| Autor: | Changtai Xia, Shun-Ming Sun, Wen-Jun Liu, Shi-Jin Ding, Hongyu Yu, Ya-Wei Huan, David Wei Zhang, Chen-Jie Gu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
β-Ga2O3
Materials science Band gap Contacts Oxide Nanochemistry Metal stacks 02 engineering and technology 01 natural sciences chemistry.chemical_compound Electric field Power electronics 0103 physical sciences lcsh:TA401-492 Figure of merit General Materials Science Ohmic contact 010302 applied physics Nano Review 021001 nanoscience & nanotechnology Condensed Matter Physics Engineering physics Intermediate semiconductor layer chemistry lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology Material properties |
| Zdroj: | Nanoscale Research Letters Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018) |
| ISSN: | 1556-276X 1931-7573 |
| Popis: | Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV, a high breakdown electric field of 8 MV/cm, and exceptional Baliga’s figure of merit (BFOM), along with superior chemical and thermal stability. These features suggest its great potential for future applications in power and optoelectronic devices. However, the critical issue of contacts between metal and Ga2O3 limits the performance of β-Ga2O3 devices. In this work, we have reviewed the advances on contacts of β-Ga2O3 MOSFETs. For improving contact properties, four main approaches are summarized and analyzed in details, including pre-treatment, post-treatment, multilayer metal electrode, and introducing an interlayer. By comparison, the latter two methods are being studied intensively and more favorable than the pre-treatment which would inevitably generate uncontrollable damages. Finally, conclusions and future perspectives for improving Ohmic contacts further are presented. |
| Databáze: | OpenAIRE |
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