Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
| Autor: | Rainer Timm, Brian D. Schultz, Chris Palmstrom, Alexei Zakharov, Anders Mikkelsen, Jason K. Kawasaki, Martin Hjort, Thomas Neulinger |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Condensed matter physics Process Chemistry and Technology 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology Heusler compound Epitaxy 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography Electron diffraction Topological insulator 0103 physical sciences X-ray crystallography Materials Chemistry engineering Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Valence electron Instrumentation Surface states Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| ISSN: | 2166-2746 |
| DOI: | 10.1116/1.4807715 |
| Popis: | The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half Heuslers that are predicted to be semiconducting, despite being composed entirely of metallic elements. The growth of the Half Heusler compound NiTiSn by molecular beam epitaxy is demonstrated. The NiTiSn films are epitaxial and single crystalline as observed by reflection high-energy electron diffraction and x-ray diffraction. Temperature dependent transport measurements suggest the films may be semiconducting, but with a high background carrier density indicative of a high density of electrically active defect states. Methods of protecting the sample surface for synchrotron-based photoemission measurements are explored. These methods may be applied to the study of surface electronic structure in unconventional materials. |
| Databáze: | OpenAIRE |
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