Double-Port Double-Throw (DPDT) Switch Matrix Based on Phase Change Material (PCM)
| Autor: | Damien Passerieux, A. Hariri, Cyril Guines, Clement Hallepee, Pierre Blondy, Aurelian Crunteanu |
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| Přispěvatelé: | RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry 020206 networking & telecommunications Port (circuit theory) 02 engineering and technology 01 natural sciences Phase-change material Optical switch [SPI.MAT]Engineering Sciences [physics]/Materials Matrix (mathematics) [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism RF switch 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Radio frequency Wideband [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business ComputingMilieux_MISCELLANEOUS |
| Zdroj: | European Microwave Week, EuMW 2018, IFEMA-FERIA DE MADRID, Madrid, Spain, 23rd – 28th September 2018 European Microwave Week, EuMW 2018, IFEMA-FERIA DE MADRID, Madrid, Spain, 23rd – 28th September 2018, Sep 2018, Madrid, Spain |
| Popis: | This paper presents the design, fabrication and high frequency characterization of GeTe phase change material based double port double throw switch (DPDT) matrix using phase change materials. The material exhibits non-volatile conductivity changes between amorphous high resistance and crystalline low resistance state. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of 4-terminal RF switch and the integration of this structure into wideband DPDT matrices. The proposed device has less than 2 dB loss and more than 20 dB below 5 GHz. This matrix can retain its state without any applied bias. |
| Databáze: | OpenAIRE |
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