Catalytic etching of monolayer graphene at low temperature via carbon oxidation
| Autor: | Junhong Na, Gyu-Tae Kim, Junhee Choi, Jae-Hyun Lee, Jun Eon Jin, Dongmok Whang, Dohyun Kim, Ho Kyun Jang |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
General Physics and Astronomy chemistry.chemical_element Nanotechnology macromolecular substances 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention stomatognathic system law Etching (microfabrication) Physical and Theoretical Chemistry Inert gas Graphene oxide paper Graphene fungi Graphene foam technology industry and agriculture 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry Chemical engineering Catalytic oxidation 0210 nano-technology Carbon Graphene nanoribbons |
| Zdroj: | Physical chemistry chemical physics : PCCP. 18(1) |
| ISSN: | 1463-9084 |
| Popis: | In this work, an easy method to etch monolayer graphene is shown by catalytic oxidation in the presence of ZnO nanoparticles (NPs). The catalytic etching of monolayer graphene, which was transferred to the channel of field-effect transistors (FETs), was performed at low temperature by heating the FETs several times under an inert gas atmosphere (ZnO + C → Zn + CO or CO2). As the etching process proceeded, diverse etched structures in the shape of nano-channels and pits were observed under microscopic observation. To confirm the evolution of etching, current–voltage characteristics of monolayer graphene were measured after every step of etching by catalytic oxidation. As a result, the conductance of monolayer graphene decreased with the development of etched structures. This decrease in conductance was analyzed by percolation theory in a honeycomb structure. Finally, well-patterned graphene was obtained by oxidizing graphene under air in the presence of NPs, where Al was deposited on graphene as a mask for designed patterns. This method can substitute graphene etching via carbon hydrogenation using H2 at high temperature. |
| Databáze: | OpenAIRE |
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