Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide
| Autor: | Jan Genoe, Geoffrey Pourtois, A. de Jamblinne de Meux, Paul Heremans |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Amorphous indium gallium zinc oxide INSTABILITY General Physics and Astronomy 02 engineering and technology 01 natural sciences Physics Applied law.invention CHANNEL law 0103 physical sciences NEGATIVE BIAS Electronics EXCHANGE 010302 applied physics Indium gallium zinc oxide HIGH-MOBILITY Amorphous semiconductors Science & Technology STABILITY SPACE GAUSSIAN PSEUDOPOTENTIALS business.industry Physics Transistor 021001 nanoscience & nanotechnology TRANSPARENT Physical Sciences ILLUMINATION STRESS THIN-FILM TRANSISTORS Optoelectronics 0210 nano-technology business |
| Zdroj: | Physical review applied |
| ISSN: | 2331-7019 |
| DOI: | 10.1103/physrevapplied.9.054039 |
| Popis: | © 2018 American Physical Society. Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a-IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal - metal or oxygen - oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a-IGZO, the most important point defects are metal - metal bonds (or small metal clusters) and peroxides (O-O single bonds). Electrons are captured by metal - metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a-IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides. ispartof: PHYSICAL REVIEW APPLIED vol:9 issue:5 status: published |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|