| Popis: |
Perpendicular synthetic-antiferromagnet (p-SAF) has broad application prospects on spin-transfer-torque magnetic random access memory and magnetic sensors. In this study, the p-SAF films consisting of (Co/Ni)3]/Ir(t Ir)/[(Ni/Co)3 were fabricated by magnetron sputtering. We study domain structure and switching field distribution in p-SAF by varying the thickness of the infrared space layer. The strongest exchange coupling field (Hex) was observed when the thickness of Ir layer (t Ir) is 0.7 nm and getting weak according to the Ruderman-Kittel-Kasuya-Yosida-type coupling at 1.05, 2.1, 4.55, and 4.9 nm in sequence. Furthermore, the domain switching process between the upper and bottom Co/Ni stacks is different because of the antiferromagnet coupling. Compared to ferromagnet coupling films, three irreversible reversal regions in first-order reversal curve distribution can be found in the antiferromagnet samples. With increasing t Ir, these irreversible reversal regions become denser and get smaller. Results from this study will help us understand the details of the magnetization reversal process in the p-SAF. |
