Comparison between innovative TO-247 IGBT copacked with SiC diode and SiC MOSFET in bidirectional boost converter
| Autor: | Rosario Scollo, Domenico Paternostro, Santi Agatino Rizzo, Giovanni Susinni, Giacomo Scelba |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
SiC diode
Materials science distributed generation business.industry Electrical engineering more electric aircraft Automotive Insulated-gate bipolar transistor Converters IGBT chemistry.chemical_compound Reliability (semiconductor) chemistry Boost converter MOSFET Silicon carbide SiC MOSFET Power semiconductor device hybrid device business Diode |
| Popis: | Bidirectional DC/DC converters are very useful in different sustainable energy sectors, such as renewable energies, and electric mobility. In the last application, automotive-grade power devices are required because of the high reliability requested to the system. Recently, the first automotive-grade TO-247 IGBT copacked with SiC diode has been manufactured. In this work its performance has been firstly investigated in a bidirectional boost converter. A comparison with SiC MOSFET has been also carried out in order to provide useful guidelines in the design of this converter. |
| Databáze: | OpenAIRE |
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