High-efficiency silicon Mach-Zehnder modulator with vertical PN junction based on fabrication-friendly strip-loaded waveguide

Autor:	Kazuto Itoh, Morifumi Ohno, Koji Yamada, Guangwei Cong, Makoto Okano, Nobuhiko Nishiyama, Yuriko Maegami, Shigehisa Arai
Rok vydání:	2017
Předmět:	Amorphous silicon Silicon photonics Materials science Silicon business.industry Hybrid silicon laser Electro-optic modulator chemistry.chemical_element Silicon on insulator Waveguide (optics) chemistry.chemical_compound Optics chemistry Optoelectronics business Phase modulation
Zdroj:	2017 IEEE 14th International Conference on Group IV Photonics (GFP).
DOI:	10.1109/group4.2017.8082176
Popis:	We demonstrate a vertical p-n junction silicon Mach-Zehnder modulator constructed with hydrogenated amorphous silicon strip-loaded waveguides on a flat SOI platform. A 3-mm-long phase shifter shows 0.80- to 1.86-Vcm modulation efficiency, 7.3- to 16.9-dBV loss-efficiency product, 3-dB bandwidth of 17 GHz, and 25-Gb/s operation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b7b24d9f00db57e05aa7271d579deee https://doi.org/10.1109/group4.2017.8082176 Zobrazit plný text záznamu