Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires
| Autor: | Anri Nakajima, Kensaku Kawamura, Kenji Ohba, Shin Yokoyama, Toshiro Kidera |
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| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Annealing (metallurgy) chemistry.chemical_element Nanotechnology Chemical vapor deposition engineering.material chemistry.chemical_compound Polycrystalline silicon chemistry Silicon nitride Electrical resistivity and conductivity engineering Optoelectronics Disilane Reactive-ion etching business |
| Zdroj: | Applied Physics Letters. 79(4):494-496 |
| ISSN: | 0003-6951 |
| Popis: | The low-temperature (410 °C) selective deposition of Si on silicon nitride has been achieved by means of the time-modulated flow of disilane while a very small amount of Si is deposited on SiO2. Very narrow (21 nm width and 28 nm thick) Si wires have been fabricated using the selective deposition. The resistivity of the Si wires fabricated by the selective deposition is much smaller (∼1/5) than that fabricated by the conventional reactive ion etching followed by annealing. This technique will be applicable to the formation of a polycrystalline silicon gate with small resistivity for the high-performance ultrasmall metal–oxide–semiconductor transistors and quantum effect devices. |
| Databáze: | OpenAIRE |
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