Matching Performance of FinFET Devices With Fin Widths Down to 10 nm

Autor:	P. Parvais, Guido Groeseneken, Stefaan Decoutere, Felice Crupi, Paolo Magnone, Nadine Collaert, Morin Dehan, J. Benson, R.J.P. Lander, V. Subramanian, Calogero Pace, Abdelkarim Mercha, T. Merelle
Jazyk:	angličtina
Rok vydání:	2009
Předmět:	Fin Materials science business.industry Charge density Dielectric Electronic Optical and Magnetic Materials Threshold voltage Semiconductor Planar MOSFET Electronic engineering Optoelectronics Electrical and Electronic Engineering business High-κ dielectric
Popis:	In this letter, the matching performances of FinFET devices with high-k dielectric, metal gates, and fin widths down to 10 nm are experimentally analyzed. The stochastic variation of threshold voltage and current factor is examined for both p- and n-type FinFETs. An improvement of the matching performance is expected compared to conventional planar bulk devices since the fins are undoped. The impact of line edge roughness and charge density in the high-k dielectric is evaluated in order to understand which physical parameter fluctuation is dominant on the measured matching parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b708c820c7cc9a074e4547d099b813b http://hdl.handle.net/11577/3292769 Zobrazit plný text záznamu