Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors
| Autor: | Prathamesh Dhakras, Harold L. Hughes, Ramya Cuduvally, Phung Nguyen, Ji Ung Lee |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
0301 basic medicine
Electron mobility lcsh:Medicine FOS: Physical sciences Electron Article law.invention 03 medical and health sciences symbols.namesake 0302 clinical medicine law Ballistic conduction Dispersion relation Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Statistical physics lcsh:Science Physics Multidisciplinary Condensed Matter - Mesoscale and Nanoscale Physics lcsh:R Fermi level Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 030104 developmental biology Transmission (telecommunications) Coupling parameter symbols lcsh:Q 030217 neurology & neurosurgery |
| Zdroj: | Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019) Scientific Reports |
| Popis: | We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori’s model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices. |
| Databáze: | OpenAIRE |
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