Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
| Autor: | Augustinas Galeckas, K. E. Knutsen, Filip Tuomisto, A. Yu. Kuznetsov, B. G. Svensson, A. Zubiaga, G. C. Farlow |
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| Přispěvatelé: | Department of Applied Physics, Aalto-yliopisto, Aalto University, Perustieteiden korkeakoulu, School of Science, Teknillisen fysiikan laitos |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Photoluminescence ta221 chemistry.chemical_element Activation energy Oxygen Molecular physics Condensed Matter::Materials Science Impurity Hall effect Electron beam processing ta218 positrons ta214 ta114 Physics Condensed Matter Physics vacancies Acceptor Electronic Optical and Magnetic Materials chemistry ZnO positron Charge carrier photoluminescence Atomic physics |
| ISSN: | 1098-0121 |
| Popis: | By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level emission centered at ∼1.75 eV and exhibiting an activation energy of thermal quenching of 11.5 meV is associated with the zinc vacancy. Further, a strong indication that oxygen interstitials act as a dominating acceptor is derived from the analysis of charge carrier losses induced by electron irradiation with variable energy below and above the threshold for Zn-atom displacement. We also demonstrate that the commonly observed green emission is related to an extrinsic acceptorlike impurity, which may be readily passivated by oxygen vacancies. © 2012 American Physical Society |
| Databáze: | OpenAIRE |
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