Inkjet printable and low annealing temperature gate-dielectric based on polymethylsilsesquioxane for flexible n-channel OFETs
| Autor: | Afshin Dadvand, Ye Tao, Ta-Ya Chu, Jianping Lu, Christophe Py, Raluca Movileanu |
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| Rok vydání: | 2016 |
| Předmět: |
High breakdown voltage
Gate dielectrics Electron mobility Electric fields Silver Materials science Annealing (metallurgy) High electric fields Gate dielectric 02 engineering and technology Dielectric Field effect transistors Transistors 010402 general chemistry 01 natural sciences Leakage currents Annealing law.invention Dielectric materials Biomaterials High electron mobility transistors Flexible electronic devices Polymethylsilsesquioxane law Materials Chemistry N-channel transistors Electrical and Electronic Engineering Inkwell business.industry Transistor General Chemistry Reproducibilities 021001 nanoscience & nanotechnology Condensed Matter Physics Reconfigurable hardware 0104 chemical sciences Electronic Optical and Magnetic Materials Semiconductor Spin on glass Electrode Optoelectronics Glass Spin glass Organic field effect transistors 0210 nano-technology business Heterojunction bipolar transistors |
| Zdroj: | Organic Electronics. 30:213-218 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2015.12.023 |
| Popis: | We report on inkjet printable gate-dielectric based on a spin-on-glass (SOG) material for applications in n-type organic field-effect transistors (OFETs). The SOG material is polymethylsilsesquioxane in alcohol mixture. After annealed at 135 °C in air, the SOG films are well crosslinked and have a good resistance against alcohol, which allows for the inkjet printing of Ag gate electrodes on top of the SOG dielectric. The crosslinked SOG films are very dense, and can withstand high electric field. This is very beneficial to the operation of transistors. In addition, the SOG films have very low hydroxyl content after annealing. This property is very important for n-type transistors. After ink formulation, this SOG dielectric has an excellent inkjet-ability with good uniformity and reproducibility. By using Polyera's P(NDI2OD-T2) as the semiconductor and SOG as the dielectric, bottom-contact top-gated n-type transistors were successfully fabricated on PET substrates with electron mobility above 0.1 cm2/V and high on/off ratio well above 105. These remarkable results demonstrate that this newly formulated SOG dielectric is a promising candidate for the future development of flexible electronic devices. |
| Databáze: | OpenAIRE |
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