Hollow-cathode activated PECVD for the high-rate deposition of permeation barrier films
Autor: | John Fahlteich, Steffen Schönfeld, Steffen Straach, Jeff Th. M. De Hosson, Sebastian Bunk, Thomas Kühnel, Michiel Top |
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Přispěvatelé: | Publica |
Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
Hexamethyldisiloxane
Materials science Scanning electron microscope PECVD Analytical chemistry PLASMAS Hollow cathode 02 engineering and technology Chemical vapor deposition ORGANOSILICON FILMS engineering.material 01 natural sciences chemistry.chemical_compound THIN-FILMS X-ray photoelectron spectroscopy Coating Plasma-enhanced chemical vapor deposition 0103 physical sciences Materials Chemistry SIO2 Thin film High-Rate-Deposition WVTR LOW-TEMPERATURE PECVD 010302 applied physics SPECTROSCOPY XRay reflectivity ArcPECVD Surfaces and Interfaces General Chemistry High rate deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films X-ray reflectivity CHEMICAL-VAPOR-DEPOSITION chemistry SPECTROMETRY engineering 0210 nano-technology |
Zdroj: | Surface & Coatings Technology, 314(Special ussue), 155-159. Elsevier Science |
ISSN: | 0257-8972 |
Popis: | This paper shows a study on the variation of the flow ratio between oxygen and Hexamethyldisiloxane (HMDSO) in a hollow cathode arc PECVD process. Dynamic deposition rates were measured between 300 and 500 nm * m/ min. The deposited plasma polymer films were analyzed using visible light spectroscopy, X-ray photo -electron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier -transformed infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and water vapor transmission rate (WVTR) measurements. The deposited samples were compared to a reactively sputtered SiO2 thin film. By increasing the oxygen to HMDSO flow ratio, the chemical, density and optical properties of the coating approached the sputtered Si02 film. However the permeation barrier of the SiO2 film only shows a slight improvement over that of the bare PET substrate. The organic coating with high power and low oxygen flow, which was deposited with a deposition rate of 450 nm * m/min, approached the barrier of the sputtered SiO2 thin film with a WVTR of 0.16 g/(m' day). 2016 Elsevier B.V. All rights reserved. |
Databáze: | OpenAIRE |
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