Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures
| Autor: | O. D. D. Couto, Thayná Mardegan, Christoph Deneke, Sidnei Ramis de Araújo, Carlos Alberto Ospina Ramirez, Fernando Iikawa, Suwit Kiravittaya, Saimon Filipe Covre da Silva |
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| Rok vydání: | 2017 |
| Předmět: |
Fabrication
Materials science Photoluminescence Strain-free quantum dots Ga-assisted deoxidation 02 engineering and technology 01 natural sciences Materials Science(all) Etching (microfabrication) 0103 physical sciences General Materials Science 010306 general physics Anisotropy Quantum well Mesoscopic physics Nano Express Strain (chemistry) business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Controllability Optoelectronics Local hole etching 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | LOCUS Repositório Institucional da UFV Universidade Federal de Viçosa (UFV) instacron:UFV Nanoscale Research Letters |
| ISSN: | 1556-276X 1931-7573 |
| DOI: | 10.1186/s11671-016-1782-1 |
| Popis: | We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 μm and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices. |
| Databáze: | OpenAIRE |
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