Gap-closing test structures for temperature budget determination
| Autor: | Jurriaan Schmitz, R.A.M. Wolters, Erik Jouwert Faber |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
EWI-20197
Materials science Silicon Hybrid silicon laser business.industry chemistry.chemical_element Silicon on insulator Atmospheric temperature range Temperature measurement Monocrystalline silicon IR-77947 chemistry.chemical_compound chemistry METIS-278716 Silicide Electronic engineering Optoelectronics Silicon bandgap temperature sensor business |
| Zdroj: | 24th International Conference on Microelectronic Test Structures, ICMTS 2011, 165-169 STARTPAGE=165;ENDPAGE=169;TITLE=24th International Conference on Microelectronic Test Structures, ICMTS 2011 |
| DOI: | 10.1109/icmts.2011.5976840 |
| Popis: | We present the extension of a method for determining the temperature budget of the process side of silicon substrates and chips, employing silicide formation reactions. In this work, silicon-on-insulator type substrates are used instead of bulk silicon wafers. By an appropriate choice of the layer thicknesses of SOI and metal, lateral silicidation can be enforced. Using this principle, test structures with dedicated designs exhibit a much larger (thus easier to quantify) resistance change over time. Using novel test structures this approach of thermal budget determination spans a larger temperature range as compared to bulk-silicon substrates. Theory, test structure design and measurement results are presented using Pd layers on silicon-on-insulator substrates. |
| Databáze: | OpenAIRE |
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