Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures
Autor: | Carl H. Naylor, Qicheng Zhang, William M. Parkin, Andrew M. Rappe, Liang Z. Tan, Zhaoli Gao, Songsong Zhou, Ram Surya Gona, Marija Drndic, Joel Berry, Robert W. Carpick, Meng-Qiang Zhao, J. B. McClimon, Christopher E. Kehayias, David J. Srolovitz, Alan T. Johnson |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Field (physics) General Engineering General Physics and Astronomy Nanotechnology Heterojunction 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences symbols.namesake Transition metal Transmission electron microscopy Chemical physics Phase (matter) Monolayer symbols General Materials Science 0210 nano-technology Raman spectroscopy |
Zdroj: | ACS Nano. 11:8619-8627 |
ISSN: | 1936-086X 1936-0851 |
DOI: | 10.1021/acsnano.7b03828 |
Popis: | Heterostructures of transition metal dichalcogenides (TMDs) offer the attractive prospect of combining distinct physical properties derived from different TMD structures. Here, we report direct chemical vapor deposition of in-plane monolayer heterostructures based on 1H-MoS2 and 1T′-MoTe2. The large lattice mismatch between these materials led to intriguing phenomena at their interface. Atomic force microscopy indicated buckling in the 1H region. Tip-enhanced Raman spectroscopy showed mode structure consistent with Te substitution in the 1H region during 1T′-MoTe2 growth. This was confirmed by atomic resolution transmission electron microscopy, which also revealed an atomically stitched, dislocation-free 1H/1T′ interface. Theoretical modeling revealed that both the buckling and absence of interfacial misfit dislocations were explained by lateral gradients in Te substitution levels within the 1H region and elastic coupling between 1H and 1T′ domains. Phase field simulations predicted 1T′ morphologies with ... |
Databáze: | OpenAIRE |
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