Superdiffusion of Carbon by Vacancies Irradiated with Soft X-Rays in CZ Silicon / Superdifūzija Ar Vakancēm Iestarota Ar Mīkstajiem Rentgenstariem CZ Silīcijā
| Autor: | Algirdas Mekys, Arvydas Juozapas Janavičius, R. Purlys, Žilvinas Norgėla, Saulius Daugėla, Ringaudas Rinkūnas |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Silicon Auger effect Physics QC1-999 General Engineering Analytical chemistry silicon General Physics and Astronomy chemistry.chemical_element Soft X-rays vacancies Crystallographic defect Cz silicon symbols.namesake auger effect chemistry superdiffusion symbols point defects Irradiation Carbon |
| Zdroj: | Latvian Journal of Physics and Technical Sciences, Vol 52, Iss 5, Pp 68-75 (2015) |
| ISSN: | 0868-8257 |
| Popis: | The soft X-ray photons absorbed in the inner K, L, M shells of Si atoms produce photoelectrons and Auger electrons, thus generating vacancies, interstitials and metastable oxygen complexes. The samples of Czochralski silicon crystals covered with 0.1 μm thickness layer of carbon have been irradiated by X-rays using different voltages of Cu anode of the Russian diffractometer DRON-3M. The influence of X-rays on the formation of point defects and vacancy complexes, and their dynamics in Cz-Si crystals have been studied by infrared absorption. We have measured and calculated dynamics of concentration of carbon and interstitial oxygen using FTIR spectroscopy at room temperature after irradiation by soft X-rays. Using transmittance measurements and nonlinear diffusion theory we have calculated densities increasing for substitutional carbon and interstitial oxygen by reactions and very fast diffusion. The superdiffusion coefficients of carbon in silicon at room temperature generated by X-rays are about hundred thousand times greater than diffusion coefficients obtained for thermodiffusion. |
| Databáze: | OpenAIRE |
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