High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
| Autor: | Hung-Chun Chen, Ming-Hsuan Kao, Yi-Ling Jian, Tsung-Ta Wu, Chang-Hong Shen, Chih-Chao Yang, Chiu-Hao Chen, Chiung-Chih Hsu, Kun-Lin Lin, Jia-Min Shieh, Tung-Ying Hsieh, Yu-Lun Chueh, Jie-Yi Yao, Wei-Sheng Lin, Wen-Hsien Huang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Multidisciplinary Materials science business.industry Science Far-infrared laser 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Article Atomic layer deposition Thin-film transistor Chemical-mechanical planarization 0103 physical sciences MOSFET Optoelectronics Medicine Static random-access memory 0210 nano-technology business Electronic circuit |
| Zdroj: | Scientific Reports Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017) |
| ISSN: | 2045-2322 |
| Popis: | Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (Ion)/subthreshold swing (S.S.) of 181 µA/µm/107 mV/dec and 188 µA/µm/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at VDD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|