TID Effects in Deep N-Well CMOS Monolithic Active Pixel Sensors
| Autor: | E. Pozzati, C. Andreoli, Gianluca Traversi, Luigi Gaioni, Valerio Re, Massimo Manghisoni, Lodovico Ratti |
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| Rok vydání: | 2009 |
| Předmět: |
Nuclear and High Energy Physics
Materials science sensors Settore ING-INF/01 - Elettronica law.invention Analog front-end law analog front-end CMOS deep N-well ionizing radiation MAPS Radiation Electrical and Electronic Engineering Microelectronics Radiation hardening Diode business.industry Pulse generator Transistor Nuclear Energy and Engineering radiation damage Absorbed dose microelectronics Optoelectronics business |
| Zdroj: | IEEE Transactions on Nuclear Science. 56:2124-2131 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.2009.2012427 |
| Popis: | This paper is devoted to the study of total ionizing dose effects in deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) for particle tracking fabricated in a STMicroelectronics 130 nm process. DNW-MAPS samples were exposed to gamma-rays up to a final dose of 1100 krad(SiO2) and then subjected to a 100degC annealing cycle. Ionizing radiation tolerance was tested by monitoring the device noise properties and its response to charge injection through an external pulse generator throughout the irradiation and annealing campaign. The origins of performance degradation are discussed based on the results from radiation hardness characterization of single transistors belonging to the same CMOS technology and of test diodes reproducing the MAPS collecting electrode structure. Also circuit simulations have been performed to supply further evidence for the proposed degradation mechanisms. |
| Databáze: | OpenAIRE |
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