10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

Autor: Moïse Sotto, Hideo Arimoto, Kapil Debnath, David J. Thomson, James Byers, Shinichi Saito, Joseph William Hillier, Kian Shen Kiang, Martin D. B. Charlton, Graham T. Reed, Muhammad Husain
Rok vydání: 2021
Předmět:
Zdroj: Frontiers in Physics, Vol 9 (2021)
ISSN: 2296-424X
DOI: 10.3389/fphy.2021.659585
Popis: In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.
Databáze: OpenAIRE