10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides
Autor: | Moïse Sotto, Hideo Arimoto, Kapil Debnath, David J. Thomson, James Byers, Shinichi Saito, Joseph William Hillier, Kian Shen Kiang, Martin D. B. Charlton, Graham T. Reed, Muhammad Husain |
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Rok vydání: | 2021 |
Předmět: |
Materials science
misaligned photonic crystal QC1-999 Materials Science (miscellaneous) Biophysics Physics::Optics General Physics and Astronomy Silicon on insulator slot-mode 01 natural sciences 010309 optics 0103 physical sciences anisotropic wet etching Physical and Theoretical Chemistry 010306 general physics Mathematical Physics Photonic crystal Silicon photonics silicon photonics polarization conversion business.industry Physics Finite-difference time-domain method Polarization (waves) double-SOI Transverse mode Brillouin zone Optoelectronics Photonics business |
Zdroj: | Frontiers in Physics, Vol 9 (2021) |
ISSN: | 2296-424X |
DOI: | 10.3389/fphy.2021.659585 |
Popis: | In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications. |
Databáze: | OpenAIRE |
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