| Autor: |
N. V. Ugryumova, A. V. Skripal, D. A. Usanov |
| Předmět: |
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| Zdroj: |
Scopus-Elsevier |
| Popis: |
The results of theoretical and experimental investigations of the appearance of negative differential resistance in p-n junction diode structures in the presence of a high level of microwave power are presented. The theoretical analysis of the influence of a high level of microwave power on the form of the current-voltage characteristic of a diode takes into account the variation of the constant component of the current flowing through the p-n structure due to the heating of the free charge carriers and the rectifier effect. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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