Electronic-beam evaporation processed titanium oxide as an electron selective contact for silicon solar cells
| Autor: | Vladyslav Matkivskyi, Jong-Keuk Park, Inho Kim, Hyeon Sik Seo, Youngseok Lee, Doh-Kwon Lee |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon Passivation business.industry Contact resistance General Physics and Astronomy chemistry.chemical_element engineering.material Evaporation (deposition) Titanium oxide Atomic layer deposition Polycrystalline silicon chemistry engineering Optoelectronics General Materials Science business Layer (electronics) |
| Zdroj: | Current applied physics |
| Popis: | This work is dedicated to the study of electronic-beam (e-beam) evaporated titanium oxide (TiOx) contact for polycrystalline silicon hetero-junction solar cells. A TiOx material obtained by e-beam evaporation method is suggested as a possible alternative to the atomic layer deposition (ALD) process. The purpose is to achieve corresponding passivation efficiency between e-beam evaporation of TiOx and the ALD method. However, the TiOx in question achieved a relatively low passivation performance of Seff = 113 cm-1 in comparison to the reported ALD results. Nonetheless, as e-beam evaporation is well-established and an environmentally friendly deposition technology, e-beam evaporated TiOx passivation layer has potential for improvement. What is clearly demonstrated in our work is how such an improvement in contact resistance dropped from >55 Ω/cm2 to 2.29 Ω/cm2. Indeed, our study established a correlation between the main process parameters of e-beam evaporation and their influence on the quality of electron selective TiOx layer. Moreover, we reveal a possible scenario for the implementation of e-beam evaporated Titanium oxide as electron selective contact for asymmetrical hetero-junction solar cells. |
| Databáze: | OpenAIRE |
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