| Autor: |
JH Joachim Wolter, Gerrit J. Hamhuis, Takaaki Mano, T Twan van Lippen, Qian Gong, TJ Tom Eijkemans, R Richard Nötzel |
| Přispěvatelé: |
Photonics and Semiconductor Nanophysics |
| Jazyk: |
angličtina |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics, 44(9A), 6829-6832. American Institute of Physics |
| ISSN: |
0021-8979 |
| DOI: |
10.1143/jjap.44.6829 |
| Popis: |
Temperature-dependent photoluminescence (PL) studies of an ensemble of self-assembled (In,Ga)As quantum dots (QDs) on GaAs (100) provide insight into the nature of the continuous states between the wetting layer (WL) and QDs. In addition to the well-known anomalous temperature dependence of the PL peak position and width around 90 K due to carrier (electron–hole pair) redistribution through the WL, we observe a similar behavior at much lower temperatures around 30 K. This behavior is attributed to carrier redistribution through the low-energy continuous states between the WL and QDs, directly proving their quasi-two-dimensional character. The smaller changes in the PL spectra than the WL-induced ones, however, indicate that the carrier redistribution and, thus, the spatial extent of the continuous states are restricted to a limited area around the QDs. This is also supported by the constant integrated PL intensity in this temperature range due to the absence of nonradiative recombination within these areas. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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