Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
Autor: | Maciej R. Molas, Adam Babiński, Albert G. Nasibulin, Celal Yelgel, A. K. Ott, Vladimir I. Fal'ko, Matthew J. Hamer, Andrea C. Ferrari, Anastasia V. Tyurnina, Daniel J. Terry, Viktor Zólyomi, Roman V. Gorbachev |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Band gap FOS: Physical sciences Hexagonal boron nitride 02 engineering and technology 010402 general chemistry 01 natural sciences symbols.namesake Condensed Matter::Materials Science Transition metal Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Physical and Theoretical Chemistry Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics business.industry Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology 3. Good health 0104 chemical sciences Shear (sheet metal) Semiconductor symbols 0210 nano-technology business Raman spectroscopy Layer (electronics) |
Zdroj: | Faraday Discussions |
DOI: | 10.48550/arxiv.2003.03336 |
Popis: | III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations. Comment: 6 pages, 5 figures |
Databáze: | OpenAIRE |
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