| Autor: |
Bumman Kim, Kim Ji-Young, Joon Woo Lee, Jin-Ho Shin, Kyu Hwan Ahn, Yujin Chung |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers. |
| DOI: |
10.1109/rfic.1997.598779 |
| Popis: |
We have investigated the surface recombination and its 1/f noise properties of AlGaAs/GaAs HBT's as a function of the emitter-base structure and the surface passivation condition. It is found that the surface recombination 1/f noise can be significantly reduced by the heterojunction launcher of the abrupt junction with 30% Al mole fraction emitter. The depleted AlGaAs ledge surface passivation further suppresses the surface recombination currents. Consequently, we have achieved a very low 1/f noise corner frequency of 2.8 kHz at the collector current density of 10 kA/cm/sup 2/. The dominant noise source of the HBT is not a surface recombination current, but a bulk current noise. This is the lowest 1/f noise corner frequency among the III-V compound semiconductor devices, and comparable to those of low-noise Si BJTs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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