Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques
| Autor: | Florestano Evangelisti, E. Giovine, S. Carta, A. Notargiacomo, R. Bagni, Vittorio Foglietti |
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| Přispěvatelé: | S., Carta, R., Bagni, E., Giovine, Foglietti, V, Evangelisti, Florestano, Notargiacomo, A. |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Reactive ion etching
Materials science Silicon business.industry Analytical chemistry Field emission array chemistry.chemical_element Epitaxial semiconductor Strained silicon Germanium Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Field electron emission chemistry Electron beam source Optoelectronics Dry etching Electrical and Electronic Engineering Reactive-ion etching business Common emitter |
| Zdroj: | Microelectronic engineering 110 (2013): 230–233. doi:10.1016/j.mee.2012.11.024 info:cnr-pdr/source/autori:Carta, S.; Bagni, R.; Giovine, Ennio; Foglietti, Vittorio; Evangelisti, Florestano; Notargiácomo, Andrea/titolo:Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques/doi:10.1016%2Fj.mee.2012.11.024/rivista:Microelectronic engineering/anno:2013/pagina_da:230/pagina_a:233/intervallo_pagine:230–233/volume:110 Microelectronic engineering Volume 110 (2013): 230–233. doi:10.1016/j.mee.2012.11.024 info:cnr-pdr/source/autori:S. Carta 1, R. Bagni 2, E. Giovine 1, V Foglietti 1, F. Evangelisti 2, A. Notargiacomo 1/titolo:Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques/doi:10.1016%2Fj.mee.2012.11.024/rivista:Microelectronic engineering/anno:2013/pagina_da:230/pagina_a:233/intervallo_pagine:230–233/volume:Volume 110 |
| DOI: | 10.1016/j.mee.2012.11.024 |
| Popis: | We present the fabrication and characterization of novel high density field emitter arrays (FEAs) on CVDgrown epitaxial germanium on (001) silicon. In particular we propose a heterostructure made up of silicon as substrate and of germanium as active layer, exploiting the infrared transparency of Si and the infrared sensitivity of Ge to realize a semi-transparent photo-assisted electron beam source. We used a completely dry etching process in fluorinated gases (SF6) due to its significant under-etching for both silicon and germanium. High aspect ratio silicon and germanium FEAs, with minimum tip radii of 25 nm and 40 nm, respectively, and lower aspect ratio Ge/Si FEAs with minimum tip radii of 50 nm were fabricated. The realized FEAs show good emission behavior with field emission characteristics straight related to tip geometry: low electric field threshold for silicon and germanium tips ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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