Breakdown Enhancement in Silicon Nanowire p-n Junctions
| Autor: | P. Agarwal, F. Neuilly, E. Hijzen, M. N. Vijayaraghavan, G. A. M. Hurkx |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Silicon
Electric Wiring Materials science Surface Properties Nanowire chemistry.chemical_element Bioengineering Nanotechnology Etching (microfabrication) Materials Testing Breakdown voltage Computer Simulation General Materials Science Particle Size Nanotubes business.industry Mechanical Engineering Contact resistance Electric Conductivity Biasing Equipment Design General Chemistry Condensed Matter Physics Equipment Failure Analysis Semiconductor Models Chemical Semiconductors chemistry Nanoelectronics Optoelectronics Crystallization business |
| Zdroj: | Nano Letters. 7:896-899 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl062681n |
| Popis: | We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as rho approximately 10-7 Omega cm2. Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits. |
| Databáze: | OpenAIRE |
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